教育经历：

2001.09-2007.07，天津大学，理学院物理系，博士
1997.09-2001.07，山西大学，物理电子工程学院物理系，本科
工作经历：
2017.03- 今：天津大学，理学院物理系，副教授
2013.04-2017.01：澳大利亚国立大学 (ANU)，电子材料工程系，研究人员 (Research Fellow)
2009.10-2013.03：韩国光州科学技术院 (GIST)，材料科学与工程系，博士后 (Postdoctoral)/签约教授 (Contractor Professor)
2007.07-2009.10：中国科学院，上海硅酸盐研究所 (SICCAS)，博士后

硕士生：毕业3名

硕士毕业生去向：合肥京东方，海光信息，华虹半导体。

1. H. Hwang, S. Kim, X. Liu. Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same, 美国专利US 9269901 B2, 公告日期: 2016.02.23.

2. H. Hwang, X. Liu, M. Son. Resistive RAM, method for fabricating the same, and method for driving the same, 美国专利US 9214631 B2, 公告日期: 2015.12.15.

3. 李效民, 杨蕊, 于伟东, 刘新军, 曹 逊, 王群, 张亦文, 杨长. 电阻式随机存储器用多层薄膜结构的电阻转变方式的调控, 中国专利CN101533669, 已授权2013.01.02 (No. 200910048823.0).

4. 李效民, 曹逊, 于伟东, 杨长, 张亦文, 刘新军, 杨蕊. 氧化锌基同质结构的透明RRAM元器件及制作方法, 中国专利CN101533890, 已授权2011.12.14 (No. 200910048825.X).

5. 李效民, 曹 逊, 高相东, 张亦文, 刘新军. 电脉冲诱发电阻转变特性的二元氧化物RRAM存储单元, 中国专利CN101621115, 已授权2011.08.03 (No. 200910056301.5).

6.刘新军，胡伟，张亦文，王子武，一种基于水三棱镜原理实现弯曲彩虹投影的装置，实用新型，申请号：CN202220007415.1  申请日：2022.1.5，授权公告日：2022.5.6，授权公告号：CN216449880U  

7.刘新军，胡伟，张亦文，王子武，一种基于水三棱镜原理实现弯曲彩虹投影的方法及装置，发明专利，申请号：CN202210003657.8，申请日：2022.1.5，公开公告日：2022.3.8，公开（公告）号： CN114153110A （实质审查阶段）

8.刘新军，肖志博，刘宇浩，陈奕霖，李政行，胡伟，戴海涛，张亦文，王子武，基于三棱镜原理实现圆形彩虹增强的方法及装置，发明专利，申请号：CN202311311211.2，申请日：20231011，公开（公告）日： 20240329，公开（公告）号：CN117789576A （实质审查阶段）

9.刘新军，丁锐锋，李乐，王瑜，刘宇浩，陈奕霖，肖志博，张亦文，戴海涛，利用折射全反射菲涅尔棱镜实现环形彩虹的装置和方法，发明专利，申请号：CN202311466949.6，申请日：20231107，公开（公告）日： 20240202，公开（公告）号： CN117492191A（实质审查阶段）

（通讯和第一作者SCI索引论文）

39. Y. Li, W. Sun, X. Liu*. A new strategy for sound source localization in three-dimensional space based on the intrinsic asymmetry of memristive neuron circuits, in preparation.

38. W. Sun, Y. Li, X. Liu*. Design of a biomimetic spider web sensor using memristive oscillator, in preparation.

37. Y. Bo, Y. Zai, Z. Luo, X. Liu*. Amplifier based on NbOx volatile memristor, in preparation.

36. 刘新军，王瑜，陈奕霖，廖怡，张玉杭，张金凤，张亦文，庞海，戴海涛，塑料沙彩色光圈现象及其色散特性分析，物理实验，(二次审稿中). 

35. 刘新军，肖志博，刘宇浩，陈奕霖，丁锐锋，李乐，张亦文，通过旋转三棱镜获得凹锥透镜研究环形彩虹, 物理实验, 44(6), 2024. 

34. 刘新军, 阳光透过鱼缸投射出4级彩虹的光路分析, 物理实验, 42(6), 14-20, 2022. 

33. 刘新军, 阳光透过鱼缸在室内墙上投射出米级亮丽彩虹, 物理实验, 42(5), 23-39, 2022.

32. X. Liu*, P. Zhang, S.K. Nath, S. Li, S.K. Nandi, R.G. Elliman. Understanding composite negative differential resistance in niobium oxide memristors, Journal of Physics D: Applied Physics, 55, 105106 (2022).   https://doi.org/10.1088/1361-6463/ac3bf4

31. Z. Luo, Y. Bo, S.M. Sadaf, X. Liu*. Van der Pol oscillator based on NbO2 volatile memristor: A simulation analysis, Journal of Applied Physics, 131, 054501, (2022).

https://doi.org/10.1063/5.0073285

30. Y. Bo, P. Zhang, Z. Luo, S. Li, J. Song, and X. Liu*. NbO2 Memristive Neurons for Burst-Based Perceptron, Advanced Intelligent Systems, 2, 2000066 (2020). https://doi.org/10.1002/aisy.202000066；X. Liu, Artificial neural networks built with memristive neurons, Advanced Science News, based on the article from Advanced Intelligent Systems (2020). https://www.advancedsciencenews.com/artificial-neural-networks-built-with-memristive-neurons/

29. Y. Bo, P. Zhang, Y. Zhang, J. Song, S. Li, and X. Liu*, Spiking dynamic behaviours of NbO2 memristive neurons: A model study, Journal of Applied Physics, 127, 245101, (2020). [Featured Article] https://doi.org/10.1063/5.0004139

28. S. Li, X. Liu*, S.K. Nandi, S.K. Nath, and R.G. Elliman*. Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity, Advanced Functional Materials, 1905060, (2019). https://doi.org/10.1002/adfm.201905060

27. P. Zhang, S. Li, Y.H. Bo, and X. Liu*. Collective dynamics of capacitively coupled oscillators based on NbO2 memristors, Journal of Applied Physics, 126, 125112, (2019). https://doi.org/10.1063/1.5116777

26. S. Li, X. Liu, S.K. Nandi, and R.G. Elliman. Anatomy of filamentary threshold switching in amorphous niobium oxide, Nanotechnology, 29, 375705, (2018).

25. S.K. Nandi, S. Li, X. Liu, and R.G. Elliman. Temperature dependent frequency tuning of NbOx relaxation oscillators, Applied Physics Letters, 111, 202901, (2017).

24. S. Li, X. Liu, S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman. Coupling dynamics of Nb/Nb2O5 relaxation oscillators, Nanotechnology, 28, 125201, (2017).

23. X. Liu(刘新军), S. Li, S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman. Threshold switching and electrical self-oscillation in niobium oxide films, Journal of Applied Physics, 120, 124102, (2016).

22. S.K. Nandi, X. Liu , D.K. Venkatachalam, and R.G. Elliman. Self-assembly of an NbO2interlayer and configurable resistive switching in Pt/Nb/HfO2/Pt structures, Applied Physics Letters, 107, 132901, (2015).

21. S. Li, X. Liu, S.K. Nandi, D.K. Venkatachalam, and R.G. Elliman. High-endurance megahertz electrical self-oscillations in Ti/NbOx bilayer structures, Applied Physics Letters, 106, 212902, (2015).

20. X. Liu(刘新军), S.K. Nandi, D.K. Venkatachalam, K. Belay, S. Song, and R.G. Elliman. Reduced threshold current in NbO2 selector by engineering device structure, IEEE Electron Device Letters, 35,1055-1057, (2014).

19. X. Liu,S.K. Nandi, D.K. Venkatachalam, S. Li, K. Belay, and R.G. Elliman. Finite element modellingof resistive switching in Nb2O5-based memory device, Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD), P280-282 (2014).

18. X. Liu, S.M. Sadaf, S. Park, S. Kim, E. Cha, D. Lee, G.-Y. Jung, and H. Hwang. Complementary resistive switching in niobium oxide-based resistive memory devices, IEEE Electron Device Letters, 34, 235-237, (2013).

17. X. Liu, S.M. Sadaf, S. Kim, K.P. Biju, X. Cao, M. Son, S.H. Choudhury, G.-Y. Jung, H. Hwang. Improvement of resistive switching uniformity by introducing a thin NbOx interface layer, ECS Solid State Letters, 1, Q35-Q38, (2012).

16. X. Liu, K.P. Biju, J. Park, S. Park, J. Shin, I. Kim, S.M. Sadaf, and H. Hwang. Low power and controllable memory window in Pt/Pr0.7Ca0.3MnO3/Yttria-stabilized Zirconia/W resistive random-access memory devices, Journal of Nanoscience and Nanotechnology, 12, 3252-3255, (2012).

15. X. Liu, S.M. Sadaf, M. Son, J. Park, J. Shin, W. Lee, K. Seo, D. Lee, and H. Hwang. Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for cross point memory applications, IEEE Electron Device Letters, 33,236-238, (2012).

14. X. Liu, S.M. Sadaf, M. Son, J. Shin, J. Park, J. Lee, S. Park, and H. Hwang. Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications, Nanotechnology, 22, 475702, (2011).

13. X. Liu, K.P. Biju, J. Lee, J. Park, S. Kim, S. Park, J. Shin, S.M. Sadaf, and H. Hwang. Parallel memristive filaments model applicable to bipolar and filamentary resistive switching, Applied Physics Letters, 99, 113518, (2011).

12. X. Liu, K.P. Biju, E.M. Bourim, S. Park, W. Lee, D. Lee, K. Seo, and H. Hwang. Filament-type resistive switching inhomogeneous bi-layer Pr0.7Ca0.3MnO3 thin film memory devices, Electrochemical and Solid-State Letters,14, H9-H12, (2011).

11. X. Liu, K.P. Biju, S. Park, I. Kim, M. Siddik, S.M. Sadaf, and H. Hwang. Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilizedZrO2/W via-hole structures, Current Applied Physics, 11, e58-e61, (2011).

10. X. Liu, I. Kim, M. Siddik, S.M. Sadaf, K. P. Biju, S. Park, and H. Hwang. Resistive switching mechanism of a Pr0.7Ca0.3MnO3-basedmemory device and assessment of its suitability for nano-scale applications, Journal of the Korean Physical Society, 59, 497-500, (2011).

9. X. Liu, K.P. Biju, E.M. Bourim, S. Park, W. Lee, J. Shin, and H. Hwang. Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3devices, Solid State Communications, 150, 2231-2235, (2010).

8. X. Liu, X. Li, W. Yu, Q. Wang, R. Yang, X. Cao, and L. Chen. Improved resistive switching properties in Ti/TiOx/La0.7Ca0.3MnO3/Pt stacked structures, Solid State Communications,150, 137-141, (2010).

7. X. Liu, X. Li, R. Yang, Q. Wang, X. Cao, W. Yu, and L. Chen. Interfacial resistive switching properties in Ti/La0.7Ca0.3MnO3/Pt sandwich structures, Physica Status Solidi (A): Applications and Materials Science, 207, 1204-1209, (2010).

6. 刘新军, 李效民, 王群, 杨蕊, 曹逊, 陈立东. Study on the “negative”resistance switching property in Ti/La0.7Ca0.3MnO3/Pt结构器件中“负”电阻开关特性研究, 无机材料学报, 25, 151-156, (2010).

5. X. Liu, X. Li, W. Yu, Q. Wang, R. Yang, X. Cao, and L. Chen. Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches, Journal of the Ceramic Society of Japan, 117,732-735, (2009).

4. X. Liu, Z. Li, P. Wu, H. Bai, and E. Jiang. The Effect of Fe doping on structural, magnetic and electrical transport properties of CaMn1-xFexO3 (x=0-0.35), Solid State Communications, 142, 525–530, (2007).

3. X. Liu, Z. Li, A. Yu, M. Liu, W. Li, B. Li, P. Wu, H. Bai, and E. Jiang. Magnetic, electrical transport and electron spin resonance studies of Fe-doped manganite LaMn0.7Fe0.3O3+δ, Journal of Magnetism and Magnetic Materials, 313, 354–360, (2007).

2. X. Liu, E. Jiang, Z. Li, B. Li, W. Li, A. Yu, P. Wu, and H. Bai. Magnetic, electrical transport and electron spin resonance studies of ferromagnetic insulating manganites Nd0.85Na0.15MnO3, Journal of Magnetism and Magnetic Materials,305, 352–356, (2006).

1. X. Liu, E. Jiang, Z. Li, B. Li, W. Li, A. Yu, and H. Bai. Magnetic, electrical transport and electron spin resonance studies of charge-ordered Nd0.75Na0.25MnO3, Physica B, 348, 146–150, (2004).