发表SCI论文70余篇，部分列举如下
1. Sanfeng Wu, Sonia Buckley, John R. Schaibley, Liefeng Feng, Jiaqiang Yan, David G. Mandrus, Fariba Hatami, Wang Yao, Jelena Vucˇkovic′, Arka Majumdar, Xiaodong Xu, Monolayer semiconductor nanocavity lasers with ultralow thresholds, Nature 520, 69-72, 2015.
2. Renpeng Liu, Yang Wang, Xinyu Sun, Yuqin Zhang, Zhaoliang Ni, Wanyu Tang, Hao Wang, Liefeng Feng,* Shuangjie Liu,* and Xiao-Dong Zhang*, 2D Optimized Electrodes for Highly Sensitive and Biocompatible Neural Recording, ACS Appl. Nano Mater. 7, 11910−11920, 2024.
3. Miaoyu Wang, Fangzhen Tian, Qi Xin, Huizhen Ma, Ling Liu, Shuyu Yang, Si Sun, Nan Song, KeXin Tan, Zhenhua Li, Lijie Zhang, Qi Wang, Liefeng Feng,* Hao Wang,* Zhidong Wang,*and Xiao-Dong Zhang, In Vivo Toxicology of Metabolizable Atomically Precise Au25 Clusters at Ultrahigh Doses, Bioconjugate Chem. 35, 540−550, 2024.
4. Kaijin Liu, Jiaxue Niu, Ling Liu, Fangzhen Tian, Hongmei Nie, Xiaoyu Liu, Ke Chen, Ruoli Zhao, Si Sun, Menglu Jiao, Maoye Tian, Xinyu Sun, Lanfei Niu, Xinyi Sun, Hao Wang, Wei Long, Liefeng Feng,*Xiaoyu Mu,* and Xiao-Dong Zhang*，LUMO-Mediated Se and HOMO-Mediated Te Nanozymes for Selective Redox Biocatalysis, Nano Lett. 23, 5131−5140, 2023.
5. Peng Sun, Mengdie Zhang, Fengliang Dong*, Liefeng Feng*, and Weiguo Chu*, Broadband achromatic polarization insensitive metalens over 950 nm bandwidth in the visible and near-infrared, Chinese Optics Letters 20(1), 013601, 2022.
6. Ding Li, Liefeng Feng*, Wei Yang*, Xiufang Yang, Xiaodong Hu*，and Cunda Wang， Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantumwell semiconductor laser diodes，J. Phys. D: Appl. Phys. 53, 155104, 2020.
7. S. P. Wang, R. J. Zhang, L. Zhang, L. F. Feng*, and J. Liu*, Accurate change of carrier types within ultrathin MoTe2 field-effect transistors with the time exposed to ambient air，J Mater Sci, 54:3222–3229, 2019.
8. Zhihong Feng, Buyun Chen, Shuangbei Qian, Linyan Xu, Liefeng Feng*, Yuanyuan Yu, Rui Zhang, Jiancui Chen, Qianqian Li, Quanning Li, Chongling Sun, Hao Zhang, Jing Liu, Wei Pang, Daihua Zhang, Chemical sensing by band modulation of a black phosphorus/molybdenum diselenide van der Waals hetero-structure, 2D Mater. 3, 035021，2016.
9. Liefeng Feng*, Shupeng Wang, Yang Li, Ding Li*, Cunda Wang, Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- multi-quantum-well laser diodes, J. Phys. D, 51(9): 095102，2018.
10. Liefeng Feng#*, Shupeng Wang, Yang Li, Xiufang Yang, Ding Li*, Cunda Wang, Opposite change trend of electrical behavior curves near the threshold, Appl. Phys. B, 124:39, 2018.
11. Qianqian Li, Jiancui Chen, Zhihong Feng, Liefeng Feng*, Dongsheng Yao, Shupeng Wang, The Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field-Effect Transistors, Nanoscale Research Letters, 11:521, 2016.
12. Lie-Feng Feng*, Kun Zhao, Hai-Tao Dai, Shu-Guo Wang, Xiao-Wei Sun, Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells, Chin. Phys. B, 25, 3037307, 2016.
13. K Zhao, XF Yang, B Xu, D Li, CD Wang, LF Feng*, Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes, Journal of Electronic Materials, 45(1): 786-790, 2016.
14. Liefeng Feng*, Xiufang Yang, Yang Li, Ding Li, Cunda Wang, Dongsheng Yao, Xiaodong Hu, and Hongru Li, Competitive behavior of photons contributing to junction voltage jump in narrow band-gap semiconductor multi-quantum-well laser diodes at lasing threshold, AIP ADVANCES 5, 047132, 2015.
15. Ding Li, Hua Zong, Wei Yang, Liefeng Feng, Juan He, Weimin Du, Cunda Wang, Ya-Hong Xie, Zhijian Yang, Bo Shen, Guoyi Zhang, and Xiaodong Hu, Stimulated emission in GaN-based laser diodes far below the threshold region, OPTICS EXPRESS 2536, 2014.
16. Ding Li, Wei Yang, Liefeng Feng, Peter W. Roth, Juan He,Weimin Du , Zhijian Yang, Cunda Wang, Guoyi Zhang, Xiaodong H, Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes, APPLIED PHYSICS LETTERS 102, 123501, 2013.
17. L. F. Feng*, Y. Li, D. Li, X. D. Hu, W. Yang, C. D. Wang, Q. Y. Xing, Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes, APPLIED PHYSICS LETTERS 101, 233506, 2012.
18. Y. Li, C.D. Wang, L.F. Feng*, C.Y. Zhu, H.X. Cong, D. Li, G.Y. Zhang, Elucidating negative capacitance in light-emitting diodes using an advanced semiconductor device theory, J. Appl. Phys. 109, 124506, 2011.
19. Feng LieFeng*, Li Yang, Li Ding, Wang CunDa, Zhang GuoYi, Yao DongSheng, Liu WeiFang, Xing Peng-Fei, Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes, CHIN. PHYS. LETT. Vol. 28, 10, 107801, 2011.
20. L.F. Feng*, Y. Li, C.Y. Zhu, H.X. Cong, and C.D. Wang, Negative Terminal Capacitance of Light Emitting Diodes at Alternating Current (AC) Biases, IEEE J. Quantum Electronics, 46(7): 1072-1075, 2010.
